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Solid phase has two allotropes. Also there has been conflicts in literature of the phase transition temperature, according to last works it is assigned to 103 K (-170 °C). Below 103 K it has slightly disordered structure and over transition point, it has body centered cubic structure.
Table of densities:
Vapor density is 4.823 (air = 1), specific gravity at 21 °C is 4.773 (air = 1) and specific volume at 21 °C is 0.1748 m³/kg.
Hexafluoroethane is used as a versatile etchant in semiconductor manufacturing. It can be used for selective etching of metal silicides and oxides versus their metal substrates and also for etching of silicon dioxide over silicon.
Due to the high energy of C-F bonds, it is very inert and thus acts as an extremely stable greenhouse gas, with an atmospheric lifetime of 10000 years and a global warming potential (GWP) of 9200. Atmospheric concentration of tetrafluoroethane is 3 pptv (increase by 3 pptv since 1750). However, it has a strong absorption potential in the infrared part of the spectrum. Radiative forcing is 0.001 W/m². Its ozone depletion potential (ODP) is 0.
Hexafluoroethane is listed in IPCC list of greenhouse gases.
Due to its high relative density, it gathers on the low places and in high concentrations it can cause asphyxiation. Other effects are similar as at tetrafluoromethane.
|This article is licensed under the GNU Free Documentation License. It uses material from the Wikipedia article "Hexafluoroethane". A list of authors is available in Wikipedia.|