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Indium phosphide (InP) is a binary semiconductor composed of indium and phosphorus. It is used in high-power and high-frequency electronics because of its superior electron velocity with respect to the more common semiconductors silicon and gallium arsenide. It also has a direct bandgap, making it useful for optoelectronics devices like laser diodes.
The Sellmeier equation that describes how the optical refractive index for indium phosphide depends on wavelength is given by where λ is the wavelength in micrometres.
This gives refractive index values rising from around 3.21 at 10 µm and 3.32 at 1.5 µm to 3.47 at 1.0 µm.
|This article is licensed under the GNU Free Documentation License. It uses material from the Wikipedia article "Indium(III)_phosphide". A list of authors is available in Wikipedia.|