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Abstract
One of the best candidate on the role of the THz optoelectronic pairs appears to be the high mobility p ‐type silicon quantum well (Si‐QW), 2 nm, confined by the δ‐barriers heavily doped with boron on the n ‐type Si (100) surface. The δ‐barriers heavily doped with boron are already shown to exhibit the high temperature superconductor properties, Tc = 145 K, 2Δ = 44 meV and Hc 2 = 0.22 T. This Si‐QW confined by the superconductor δ‐barriers is a basis of the sandwich nanostructure device that is used to register the Shapiro steps and the Fiske steps by measuring the Josephson CV characteristics. The Josephson GHz and THz emission is controlled, for the first time, by stabilizing the drain‐source current and by varying the top gate voltage. (© 2012 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
| Authors: | Bagraev, Nikolay; Danilovsky, Eduard; Gets, Dmitry; Klyachkin, Leonid; Kudryavtsev, Andrey; Kuzmin, Roman; Malyarenko, Anna | |
| Journal: | physica status solidi (c) | |
| Year: | 2012 | |
| Pages: | n/a | |
| DOI: | 10.1002/pssc.201100060 | |
| Publication date: | 28-03-2012 |
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