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Abstract

Two‐dimensional analysis of gate lag in AlGaN/GaN HEMTs is performed by considering a deep donor and a deep acceptor in a buffer layer. It is shown that relatively large gate lag can arise due to traps in the buffer layer. It is also shown that the buffer‐related gate lag becomes smaller when the gate length becomes longer. Dependence of buffer‐related gate lag on trap parameters such as a deep‐acceptor density and a deep‐donor's energy level is also studied (© 2012 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

Authors:   Atsushi Nakajima, Kunitaka Fujii, Kazushige Horio
Journal:   physica status solidi (c)
Year:   2012
Pages:   n/a
DOI:   10.1002/pssc.201100636
Publication date:   14-05-2012

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