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2,272 Newest Publications of AIP Publishing Center
rss17-05-2013 | David K. Ferry, Journal of Vacuum Science & Technology B, 2013
The Physics and Chemistry of Surfaces and Interfaces conference has maintained a focus on the interfacial and surface properties of materials since its initiation in 1974. The conference continues to be a major force in this field, bringing together scientists from a variety of disciplines to ...
16-05-2013 | C. Y. Chou, A. Torfi, and W. I. Wang, Journal of Vacuum Science & Technology B, 2013
Low resistance ohmic contacts are important for high frequency applications of InP-based heterojunction bipolar transistors and high electron mobility transistors. In this paper, the authors investigate the use of an InAs layer as the low-resistance ohmic contact to these heterostructure ...
16-05-2013 | Saumya Sengupta, Arjun Mandal, Hemant Ghadi, Subhananda Chakrabarti, and Keshav Lal Mathur, Journal of Vacuum Science & Technology B, 2013
Here the authors report a comprehensive study on InAs sub-monolayer quantum dots with different capping layers. After performing systematic optimization of InAs deposition and GaAs thickness, they grew three samples, namely A, B and C, using solid-state molecular beam epitaxy with identical ...
15-05-2013 | Adrian G. Swartz, Kathleen M. McCreary, Wei Han, Jared J. I. Wong, Patrick M. Odenthal et al., Journal of Vacuum Science & Technology B, 2013
Magnetism in graphene is an emerging field that has received much theoretical attention. In particular, there have been exciting predictions for induced magnetism through proximity to a ferromagnetic insulator as well as through localized dopants and defects. Here, the authors discuss their ...
15-05-2013 | Jonggi Kim, In-Su Mok, Youngjae Kim, Kyumin Lee, Dae-Hong Ko et al., Journal of Vacuum Science & Technology B, 2013
In this study, the authors investigated the rectifying bipolar resistive switching characteristics of Pt/HfO2/TaOx/Pt heterostacks with respect to the chemical bonding states of the TaOx base layer and the physical properties of the insulator layer. The authors demonstrated that the migration ...
15-05-2013 | Benzhong Wang and Soo-Jin Chua, Journal of Vacuum Science & Technology B, 2013
A simple, inexpensive and high throughput approach for creating two-dimensional cone-shaped nanostructures is reported. A self-assembled array of polystyrene nanospheres is employed as the primary mask to fabricate such structures on AlGaInP red light emitting diodes, resulting in over two ...
15-05-2013 | Mireille Gaillard, Christian Kubel, Chantal Boulmer-Leborgne, Di Wang, Nadjib Semmar et al., Journal of Vacuum Science & Technology B, 2013
Vertically aligned carbon nanotubes (CNTs) are grown by plasma enhanced chemical vapor deposition and are analyzed by high-resolution transmission electron microscopy. With this process, the growth of vertically aligned and densely packed CNTs can only be obtained with an Fe catalyst on an ...
14-05-2013 | Hiroki Tomita and Jun Nakamura, Journal of Vacuum Science & Technology B, 2013
Phonon dispersions for graphene nanoribbons (GNRs) have been derived from the first-principles calculations, and ballistic phonon thermal conductances have been evaluated using the Landauer theory. The phonon thermal conductance per unit width for GNR is larger than that for graphene and ...
13-05-2013 | Theodore J. Kramer, Annabel R. Chew, Theanne Schiros, Ioannis Kymissis, and Irving P. Herman, Journal of Vacuum Science & Technology B, 2013
Spontaneous demixing of poly-(3)hexylthiophene (P3HT) and polystyrene (PS) generates a dense array of crystalline P3HT nanowires embedded in a PS matrix. The PS phase is subsequently removed, to form a network of P3HT nanowires with a greatly enhanced surface area-to-volume ratio relative to ...
13-05-2013 | Emanuele Verrelli, Giorgos Galanopoulos, Ilias Zouboulis, and Dimitris Tsoukalas, Journal of Vacuum Science & Technology B, 2013
In this work, the authors present non-volatile memory devices based on nickel nanoparticles deposited by a novel sputtering process at room temperature and demonstrate and discuss the effect of nanoparticle size and density upon optimum device performance. The devices use a mixed dielectric ...
