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3,083 Newest Publications about the topic doping

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Enhancing [sigma]/[small pi]-type Copper(I)[round bullet, filled][round bullet, filled][round bullet, filled]thiophene interactions by metal doping (metal = Li, Na, K, Ca, Sc)

21-10-2014 | Xiayan Zhang; Xiaoyan Li; Yanli Zeng; Zheng Sun; Lingpeng Meng, Dalton Transactions, 2014

The influence of metal doping on σ/π-type copper(I)•••thiophene interactions and the nature of Cu•••π/S bonding have been investigated. Our calculated results show that Li, Na, K, Ca and Sc atom doping on thiophene enhance the copper(I)•••thiophene interactions. Enhancement factors are determined ...

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Estimate of the cation distribution for Ti‐doped Ni0.68Fe2.32O4 spinel ferrites by fitting magnetic moments at 10 K

18-10-2014 | J. Xu, D. H. Ji, Z. Z. Li, W. H. Qi, G. D. Tang, X. Y. Zhang, Z. F. Shang, L. L. Lang, physica status solidi (b), 2014

Ti‐doped Ni0.68Fe2.32O4 spinel ferrite samples with nominal composition Ni0.68−0.8xTixFe2.32−0.2xO4 (0 ≤ x ≤ 0.312) were prepared using conventional ceramic methods. The samples exhibited a single‐phase cubic spinel structure. When the doping level had values x > 0.15, a transition temperature, ...

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On the role of graphite in ultrananocrystalline diamond films used for electron field emitter applications (Phys. Status Solidi A 10∕2014)

18-10-2014 | Joji Kurian, Kamatchi Jothiramalingam Sankaran, I‐Nan Lin, physica status solidi (a), 2014

The Feature Article on pp. 2223–2237 gives an account of the different pieces of work conducted by various groups around the world, aimed at constituting a single model to explain the enhancement of conductivity and electron field emission properties in diamond. Kurian et al. reveal that, from ...

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Materials, Vol. 7, Pages 7010-7021: Suppression of 3C-Inclusion Formation during Growth of 4H-SiC Si-Face Homoepitaxial Layers with a 1° Off-Angle

17-10-2014 | Masumoto, Keiko ; Asamizu, Hirokuni ; Tamura, Kentaro ; Kudou, Chiaki ; Nishio, Johji ; Kojima, Kazutoshi ; Ohno, To ..., Materials, 2014

We grew epitaxial layers on 4H-silicon carbide (SiC) Si-face substrates with a 1° off-angle. The suppression of 3C-inclusion formation during growth at a high C/Si ratio was investigated, because a growth technique with a high C/Si ratio is needed to decrease residual nitrogen incorporation. 3C ...

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Doped ZnO 1D Nanostructures: Synthesis, Properties, and Photodetector Application

15-10-2014 | Cheng‐Liang Hsu, Shoou‐Jinn Chang, Small, 2014

In the past decades, the doping of ZnO one‐dimensional nanostructures has attracted a great deal of attention due to the variety of possible morphologies, large surface‐to‐volume ratios, simple and low cost processing, and excellent physical properties for fabricating high‐performance ...

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Thermoelectrics: Thermopower Enhancement by Fractional Layer Control in 2D Oxide Superlattices (Adv. Mater. 39/2014)

15-10-2014 | Woo Seok Choi, Hiromichi Ohta, Ho Nyung Lee, Advanced Materials, 2014

A precision‐growth capability enabled by advanced pulsed‐laser epitaxy can deliberately design oxide superlattices at the atomic scale. On page 6701, W. S. Choi, H. Ohta, and H. N. Lee demonstrate that a fractional δ‐doping in 2D oxide superlattices with precisely controlled interface ...

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Multimode Silicon Nanowire Transistors

15-10-2014 | Sebastian Glassner; Clemens Zeiner; Priyanka Periwal; Thierry Baron; Emmerich Bertagnolli; Alois Lugstein, Nano Letters, 2014

The combined capabilities of both a nonplanar design and nonconventional carrier injection mechanisms are subject to recent scientific investigations to overcome the limitations of silicon metal oxide semiconductor field effect transistors. In this Letter, we present a multimode field effect ...

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Ionic Liquid Based Approaches to Carbon Materials Synthesis

14-10-2014 | Zai‐Lai Xie, Dang Sheng Su, European Journal of Inorganic Chemistry, 2014

Abstract Ionic liquids (ILs) have attracted continuous interest because of their remarkable physicochemical properties, including high thermal and chemical stability, nonflammability, negligible vapor pressure, designable cation/anion pairs, electrical and ionic conductivity, low melting ...

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Controlled covalent modification of epitaxial single layer graphene on 6H-SiC (0001) with aryliodonium salts using electrochemical methods

14-10-2014 | K. J. Stevenson; P. A. Veneman; R. I. Gearba; K. M. Mueller; B. J. Holliday; T. Ohta; C. K. Chan, Faraday Discussions, 2014

Controlled covalent modification of graphene via electrochemically assisted grafting of molecules is expected to be a robust method for tuning the doping levels and work function and therefore enabling the deployment of graphene in photovoltaic and battery applications. By using aryliodonium ...

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Doping indium in [small beta]-Bi2O3 to tune the electronic structure and improve the photocatalytic activities: first-principles calculations and experimental investigation

14-10-2014 | Junying Zhang; Wenqiang Dang; Xingchen Yan; Min Li; Hong Gao; Zhimin Ao, Physical Chemistry Chemical Physics, 2014

β-Bi2O3 is an efficient visible-light photocatalyst, however, it is unable to split water to produce hydrogen because of the positive conduction band minimum (CBM). In this paper, using hybrid density functional theory (DFT) calculations, we demonstrated that by doping indium in β-Bi2O3, the CBM ...

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