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453 Newest Publications about the topic leds


High-Speed GaN/GaInN Nanowire Array Light-Emitting Diode on Silicon(111)

20-Mar-2015 | Robert Koester; Daniel Sager; Wolf-Alexander Quitsch; Oliver Pfingsten; Artur Poloczek; Sarah Blumenthal; Gregor Kel ..., Nano Letters, 2015

The high speed on–off performance of GaN-based light-emitting diodes (LEDs) grown in c-plane direction is limited by long carrier lifetimes caused by spontaneous and piezoelectric polarization. This work demonstrates that this limitation can be overcome by m-planar core–shell InGaN/GaN nanowire ...


Efficiency of UVA LEDs grown by HVPE in relation with the active region thickness

18-Mar-2015 | Sergey Kurin, Andrey Antipov, Iosif Barash, Alexander Roenkov, Alexander Usikov, Heikki Helava, Yuri Makarov, Alexan ..., physica status solidi (c), 2015

Abstract We report on results of the performance study of UVA LEDs depending on the thickness of the active region. UVA LEDs are based on GaN/AlGaN heterostructures grown on Al2O3 (0001) substrates by hydride vapor phase epitaxy (HVPE). It is shown that the use of thick (̴ 100 nm) single layer ...


Blue to true green LEDs with semipolar quantum wells based on GaN nanostripes

18-Mar-2015 | Robert A. R. Leute, Junjun Wang, Tobias Meisch, Joachim Biskupek, Ute Kaiser, Ferdinand Scholz, physica status solidi (c), 2015

Abstract Recent advances of the performance of GaN based devices with semipolar quantum wells have been realized homoepitaxially on pseudo bulk substrates which are typically small in size and high in cost. These limitations fuel the search for cheap and large area alternatives. ...


Luminescence properties of InGaN‐based dual‐wavelength light‐emitting diodes with different quantum‐well arrangements

16-Mar-2015 | Minyan Zhang, Feng Yun, Yufeng Li, Wen Ding, Hong Wang, Yukun Zhao, Weihan Zhang, Min Zheng, Zhenhuan Tian, Xilin Su ..., physica status solidi (a), 2015

Optimized dual‐wavelength InGaN‐based vertical light‐emitting diode (LEDs) structures were investigated by numerical simulations. The results show that different quantum‐well arrangements in the active region play an important role in obtaining dual‐wavelength emission. It is a better way to ...


Core–shell nanowire diode based on strain‐engineered bandgap (Phys. Status Solidi A 3∕2015)

16-Mar-2015 | Pengbo Liu, Hui Huang, Xueyu Liu, Min Bai, Danna Zhao, Zhenan Tang, Xianliang Huang, Ji‐Yeun Kim, Jinwei Guo, physica status solidi (a), 2015

Diodes as basic structures for semiconductor devices can be realized using a heterojunction or p‐type/n‐type doping. As for doping, the introduced impurities could substantially reduce the carrier mobility. For heterojunctions, on the other hand, engineering of the bandgap is required via ...


The efficiency challenge of nitride light‐emitting diodes for lighting

13-Mar-2015 | Claude Weisbuch, Marco Piccardo, Lucio Martinelli, Justin Iveland, Jacques Peretti, James S. Speck, physica status solidi (a), 2015

We discuss the challenges of light‐emitting diodes in view of their application to solid‐state lighting. The requirement is to at least displace the quite efficient fluorescent, sodium, and high intensity discharge lamps used today in the main energy consuming lighting sectors, industrial, ...


The temperature dependence of the luminescence of rare‐earth‐doped semiconductors: 25 years after Favennec

27-Feb-2015 | K. P. O'Donnell, physica status solidi (c), 2015

Abstract Twentyfive years after the publication of P. N. Favennec's seminal paper on luminescence from rare‐earth‐doped semiconductors (Electron. Lett. 25, 718–719 (1989), with 390+ citations to date) we examine the long shadow it has cast on recent studies of europium‐doped GaN, aimed at ...


Growth and characterization of mixed polar GaN columns and core–shell LEDs

27-Feb-2015 | Xue Wang, Uwe Jahn, Martin Mandl, Tilman Schimpke, Jana Hartmann, Johannes Ledig, Martin Straßburg, Hergo‐H. Wehmann ..., physica status solidi (a), 2015

The growth mechanisms of selective area growth of GaN microcolumns by metal organic vapor phase epitaxy on patterned SiOx/sapphire templates, are investigated. Both Ga‐ and N‐polar domains within a GaN column are detected. The growth system of mixed polar GaN columns is near reaction ...


A Motion‐ and Sound‐Activated, 3D‐Printed, Chalcogenide‐Based Triboelectric Nanogenerator

26-Feb-2015 | Mehmet Kanik, Mehmet Girayhan Say, Bihter Daglar, Ahmet Faruk Yavuz, Muhammet Halit Dolas, Mostafa M. El‐Ashry, Mehm ..., Advanced Materials, 2015

A multilayered triboelectric nanogenerator (MULTENG) that can be actuated by acoustic waves, vibration of a moving car, and tapping motion is built using a 3D‐printing technique. The MULTENG can generate an open‐circuit voltage of up to 396 V and a short‐circuit current of up to 1.62 mA, and ...


Sixteen years GaN on Si

25-Feb-2015 | Armin Dadgar, physica status solidi (b), 2015

GaN, the basis of high brightness LEDs and high power, high frequency FET's has developed to the second important semiconductor after Si. Although epitaxial growth of thin layers on sapphire has been developed already in the late 1980s the growth on Si, which offers lower cost and new ...


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