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485 Newest Publications about the topic leds


Sol-Gel Process Activated by Visible Light-Emitting Diodes (LEDs) for Synthesis of Inorganic Films

21-May-2015 | Suqing Shi; Xavier Allonas; Céline Croutxe-Barghorn; Abraham CHEMTOB, New Journal of Chemistry, 2015

Photoinduced sol-gel polymerization is an efficient one-step and solvent-free process to synthesize inorganic or hybrid films. Highly condensed films are achieved by the use of photoacid generators (PAGs) generating in situ Brönsted super acids without thermal densification. However, most ...


Synthesis and Luminescence properties in H2 annealing Mn-doped Y3Al5O12:Ce3+ single crystal for W-LEDs

20-May-2015 | Guorui Gu; Weidong Xiang; Cheng Yang; Xiaojuan Liang, CrystEngComm, 2015

Czochralski grown Mn-doped Y3Al5O12:Ce3+ single crystal was thermally annealed in H2 atmosphere at different temperature for 6 h and the corresponding absorption spectra, emission spectra, quantum yield (QY) and color-electric performance of Ce,Mn:YAG single crystal wafers were investigated ...


Photoluminescence properties of a new orange–red emitting Sm3+-doped Y2Mo4O15 phosphor

17-May-2015 | Author(s): Huajuan Deng , Ze Zhao , Jing Wang , Zhoufei Hei , Mengxue Li , Hyeon Mi Noh , Jung Hyun Jeong , R ..., Journal of Solid State Chemistry, 2015

Publication date: August 2015 Source:Journal of Solid State Chemistry, Volume 228 Author(s): Huajuan Deng , Ze Zhao , Jing Wang , Zhoufei Hei , Mengxue Li , Hyeon Mi Noh , Jung Hyun Jeong , Ruijin Yu A series of novel Y2Mo4O15:xSm3+ ( (0.01 ≤ x ≤ 0.20) phosphors for white ...


High-Power Genuine Ultraviolet Light-Emitting Diodes Based On Colloidal Nanocrystal Quantum Dots

13-May-2015 | Jeonghun Kwak; Jaehoon Lim; Myeongjin Park; Seonghoon Lee; Kookheon Char; Changhee Lee, Nano Letters, 2015

Thin-film ultraviolet (UV) light-emitting diodes (LEDs) with emission wavelengths below 400 nm are emerging as promising light sources for various purposes, from our daily lives to industrial applications. However, current thin-film UV-emitting devices radiate not only UV light but also visible ...


Millimeter Thin and Rubber‐Like Solid‐State Lighting Modules Fabricated Using Roll‐to‐Roll Fluidic Self‐Assembly and Lamination

12-May-2015 | Se‐Chul Park, Shantonu Biswas, Jun Fang, Mahsa Mozafari, Thomas Stauden, Heiko O. Jacobs, Advanced Materials, 2015

A millimeter thin rubber‐like solid‐state lighting module is reported. The fabrication of the lighting module incorporates assembly and electrical connection of light‐emitting diodes (LEDs). The assembly is achieved using a roll‐to‐roll fluidic self‐assembly. The LEDs are sandwiched in‐between ...


The efficiency challenge of nitride light‐emitting diodes for lighting (Phys. Status Solidi A 5∕2015)

12-May-2015 | Claude Weisbuch, Marco Piccardo, Lucio Martinelli, Justin Iveland, Jacques Peretti, James S. Speck, physica status solidi (a), 2015

The award of the 2014 Nobel Prize in Physics to I. Akasaki, H. Amano and S. Nakamura “for the invention of efficient blue light‐emitting diodes” (LEDs) illustrates the worldwide societal impact of nitrides. However, despite the remarkable achievements of the pioneers and their followers, there ...


Surface nitridation for improved dielectric/III‐nitride interfaces in GaN MIS‐HEMTs (Phys. Status Solidi A 5∕2015)

12-May-2015 | Kevin J. Chen, Shu Yang, Zhikai Tang, Sen Huang, Yunyou Lu, Qimeng Jiang, Shenghou Liu, Cheng Liu, Baikui Li, physica status solidi (a), 2015

Wide bandgap III‐nitride (III‐N) power switching transistors are capable of delivering superior performance for next‐generation energy‐efficient and compact power conversion systems. Owing to suppressed gate leakage and enlarged gate swing, III‐N insulatedgate devices are highly preferred over ...


Peculiarities of defect generation under injection current in LEDs based on A3N nanostructures

11-May-2015 | Natalia Shmidt, Evgeniia Shabunina, Alexander Usikov, Anton Chernyakov, Sergey Kurin, Hikki Helava, Yuri Makarov, physica status solidi (c), 2015

Abstract It has been demonstrated that, along with well‐known mechanisms of defect generation (DG) under injection current in fabricated UV‐ and commercial blue‐LED chips based on A3N nanostructures, other defect generation mechanisms are possible in local regions. Aging experiments performed ...


Extending group‐III nitrides to the infrared: Recent advances in InN (Phys. Status Solidi B 5/2015)

08-May-2015 | Zetian Mi, Songrui Zhao, physica status solidi (b), 2015

InN, with its narrow band gap (∼0.65 eV) and large electron mobility (12,000 cm2/V s), is an extremely important material for ultrahigh speed electronics and near‐infrared photonics. However, compared to the relatively mature GaN‐based devices, the development of InN‐based devices has been ...


First‐principles theory of acceptors in nitride semiconductors (Phys. Status Solidi B 5/2015)

08-May-2015 | John L. Lyons, Audrius Alkauskas, Anderson Janotti, Chris G. Van de Walle, physica status solidi (b), 2015

Understanding acceptors has been one of the most important issues in the development of the nitride semiconductors. Acceptor impurities are crucial to establishing p‐type doping, and acceptor‐type defects may act as sources of luminescence or as carrier traps. In this Special Issue, Lyons et ...


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