Quantum Dots

News Quantum Dots

• A step toward optical transistors?

  As demand for computing and communication capacity surges, the global communication infrastructure struggles to keep pace, since the light signals transmitted through fiber-optic lines must still be processed electronically, creating a bottleneck in telecommunications networks. While the idea of dev more

• Quantum dots photocatalyse organic reactions with near-infrared light

  The photocatalysis of alcohols to aldehydes and carboxylic acids usually involves UV or visible light, but a group of scientists from China has discovered that carbon quantum dots can catalyse such reactions using near-infrared wavelengths. Conventional UV/visible-light approaches involve expensive, more

• Connecting the (quantum) dots

  Recent research offers a new spin on using nanoscale semiconductor structures to build faster computers and electronics. Literally.University of Pittsburgh and Delft University of Technology researchers reveal in Nature Nanotechnology a new method that better preserves the units necessary to power l more

Publications Quantum Dots

• An Ultrasensitive Biosensor for DNA Detection Based on Hybridization Chain Reaction Coupled with the Efficient Quenching of Ruthenium Complex to CdTe Quantum Dots

  A highly sensitive and selective DNA biosensor based on hybridization chain reaction is described, which combines CdTe quantum dots (QDs) and ruthenium complex. Based on the variation of fluorescence signals of the CdTe QDs, the target DNA is determined. more

• Optimizing the relaxivity of Gd(III) complexes appended to InP/ZnS quantum dots by linker tuning

  Three bimodal MRI/optical nanosized contrast agents with high per-nanoparticle relaxivity (up to 2523 mM−1 s−1 at 35 MHz and 932 mM−1 s−1 at 200 MHz) have been prepared connecting up to 115 tris-aqua GdIII complexes to fluorescent non-toxic InP/ZnS quantum dots. The structure of the linker has an im more

• Robust switching characteristics in CdSe/ZnS quantum dot non-volatile memory device

  In this paper we report Al/CdSe-ZnS core-shell quantum dot/AlOx/ CdSe-ZnS core-shell quantum dot /ITO based non-volatile resistive memory device with ON/OFF ratio ~ 1000. The facile solution processed device exhibited excellent endurance characteristics for 200,000 switching cycles. Retention tests more

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