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• Diamond as a building material for optical circuits
  

  The application of light for information processing opens up a multitude of possibilities. However, to be able to adequately use photons in circuits and sensors, materials need to have particular optical and mechanical properties. Researchers at the Karlsruhe Institute of Technology (KIT) have now f more

• Natcore Scientists Build World's First Black Silicon Solar Cell Using Scalable Production Process

  Scientists at Natcore Technology Inc. have created the world's first black silicon solar cell using processes amenable to low-cost mass production. After recently treating a wafer to make it the "blackest" silicon solar cell surface ever recorded, Natcore's technicians used their scalable liquid pha more

• Siltronic Adapts Capacity for 150 Millimeter Silicon Wafers to Market Demand

  Siltronic, the semiconductor subsidiary of Wacker Chemie AG, intends to streamline its production capacity for 150 millimeter silicon wafers. For this reason, Siltronic is planning to stop producing this wafer diameter at Portland (Oregon, USA) in the fall of 2012. The decision means that Portland’s more

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• UV/Vis/NIR Spectrometry for the Film Thickness Determination of Transparent Films and Layers
  

  Within nearly all branches of industry we find products, which are coated with thin transparent layers to improve the surface features: Window sheet glasses obtain changes in reflection and absorption behavior, ceramics are treated with coatings to lower water adhesion, coatings on metals create corrosion resistance or better sliding factors. Transparent coatings play also a major role in the semiconductor business. One of the important features to be determined and controlled is the thickness of the layers to balance performance and material input during development and production more

Publications Wafer

• Excess carrier lifetime and strain distributions in a 3C‐SiC wafer grown on an undulant Si substrate

  Abstract In this study, we have used the microwave photoconductivity decay method to map excess carrier lifetimes in a n‐type 3C‐SiC wafer grown on an undulant Si substrate. We compared these lifetime maps with the distributions of strains and defects, which were observed using optical microsco more

• Synthesis of Monolayer Graphene Having a Negligible Amount of Wrinkles by Stress Relaxation

  For the chemical vapor deposition (CVD) of graphene, the grain growth of the catalyst metal and thereby surface roughening are unavoidable during the high temperature annealing for the graphene synthesis. Considering that nanoscale wrinkles and poor uniformity of synthesized graphene originate from more

• Gigahertz Integrated Graphene Ring Oscillators

  Ring oscillators (ROs) are the most important class of circuits used to evaluate the performance limits of any digital technology. However, ROs based on low-dimensional nanomaterials (e.g., 1-D nanotubes, nanowires, 2-D MoS2) have so far exhibited limited performance due to low current drive or larg more

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