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Rohm and Haas Electronic Materials Announces $30 Million Advanced R&D Expansion at Chonan, Korea Facility

08 Dec 2006 - Rohm and Haas Electronic Materials, Microelectronic Technologies announced the completion of a $30 million expansion in their Chonan, Korea facility. This investment enables advanced research and development activities in 193 nm photoresists, organic anti-reflectants and silicon hardmask technologies at the Chonan site.
 
"Local manufacturing of the most advanced products in our state-of-the art facility in Chonan combined with a highly talented resident R&D team will keep us ahead of the rapidly expanding semiconductor materials needs in this region," said Dr. Yi Hyon Paik, president of Microelectronic Technologies for Rohm and Haas Electronic Materials.
 
The Chonan plant now includes advanced 193 nm and 248 nm lithographic clusters along with edge defect and metrology tool sets. New R&D and engineering resources are in place now, with more growth planned throughout 2007 as the research programs accelerate.