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Dow Corning Achieves Quality Milestones In Silicon Carbide Semiconductor Manufacturing
Improvements move silicon carbide device technology closer to high volume manufacturing

06 Nov 2008 - Improvements in manufacturing technology have dramatically reduced defects in silicon carbide (SiC) semiconductor wafers and epitaxy, which could lead to greater energy efficiency, performance and smaller size of a variety of electronic products, researchers at Dow Corning have announced.
 
Over the last two years, Dow Corning has steadily reduced micropipes — a key defect that has been a major challenge for the industry — from an average of well over 100 per cm² to less than 10 per cm² and is on track to be well under 5 per cm² by year end, said Jim Helwick, Gobal Business Director, Dow Corning Compound Semiconductor Solutions. At the same time, X-ray measurements of crystal quality show a better than five-fold improvement and average epitaxy defects were reduced 900 percent in 18 months.
 
"These improvements are critical to drive efforts to move silicon carbide device technology closer to high volume manufacturing,” Helwick said. "The rapid technical advances in compound semiconductors combined with growing market interest in improved energy efficiency and performance put Dow Corning in a good position to support our customers with a valuable new semiconductor technology.”