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Crystallographic and topographical evolutions of a cylinder patterned sapphire substrate etched with a sulfuric acid and phosphoric acid mixture: an SEM and AFM study

Crystallographic and topographical evolutions of a cylinder patterned sapphire substrate (PSS) under ordinary wet etching conditions (H2SO4 : H3PO4 = 5 : 1 volume ratio, 230 °C) were systematically studied using complementary SEM and AFM characterization techniques. The strongly time-dependent crystallograph

Authors:   Jian Shen; Dan Zhang; You Wang; Yang Gan
Journal:   CrystEngComm
Volume:   19
edition:   42
Pages:   6383
DOI:   10.1039/C7CE01506B
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