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Spin and Optical Properties of Silicon Vacancies in Silicon Carbide − A Review (Phys. Status Solidi B 1/2018)

Atomic‐scale defects in silicon carbide, a widely used material in semiconductor industry, reveal high potential for quantum technologies. Spin‐3/2 color centers associated with silicon vacancies are of particular interest for fundamental research and applications in sensorics and spintronics. Such centers are characterized by spin‐dependent optical cycles: their spin states can be selectively initialized and read‐out by optical means and efficiently manipulated by a radiofrequency field. Here, Tarasenko et al. (article no. <!--TODO: clickthrough URL-->1700258) review the fine structure, spin dynamics, and optical properties of the silicon vacancies. The fine structure of the centers turns out to be highly sensitive to mechanical pressure, external magnetic and electric fields, temperature variation, etc., which can be utilized for efficient environment sensing at ambient conditions. Tarasenko et al. discuss the experimental achievements in magnetometry and thermometry based on the spin state mixing at level anticrossings in an external magnetic field and the underlying microscopic mechanisms. The authors also discuss the spin fluctuations in an ensemble of vacancies paving the way for weakly invasive quantum sensing protocols.

Authors:   S. A. Tarasenko, A. V. Poshakinskiy, D. Simin, V. A. Soltamov, E. N. Mokhov, P. G. Baranov, V. Dyakonov, G. V. Astakhov
Journal:   physica status solidi (b)
Volume:   255
edition:   1
Year:   2018
Pages:   n/a
DOI:   10.1002/pssb.201870101
Publication date:   17-Jan-2018
Facts, background information, dossiers
  • Research
  • Quantum Technologies
  • quantum
  • pressure
  • environment
  • electric fields
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