My watch list
my.chemeurope.com  
Login  

Effects of Ga Supply on the Growth of (11‐22) AlN on m‐Plane (10‐10) Sapphire Substrates

Flat and high‐quality semipolar AlN layers are crucial to realizing polarization‐reduced deep‐UV optical devices. We investigate the effects of Ga supply during the growth of semipolar AlN on m‐plane sapphire with the aim to produce better surface morphology. Incorporation of Ga into AlN is negligibly small at high‐temperature growth. The surface roughness significantly decreased with increasing the TMGa flow at a constant V/III ratio.

As shown by atomic force microscopy images (5 × 5 µm2) of AlN layers grown with and without a TMGa flow, the addition of Ga during the growth of (11‐22) AlN significantly improves the surface morphology.

Authors:   Masafumi Jo, Hideki Hirayama
Journal:   physica status solidi (b)
Year:   2018
Pages:   n/a
DOI:   10.1002/pssb.201700418
Publication date:   16-Jan-2018
Facts, background information, dossiers
More about Wiley
Your browser is not current. Microsoft Internet Explorer 6.0 does not support some functions on Chemie.DE