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Evolution of Lateral V-defects on InGaN/GaN on Si(111) during PAMBE: A Role of Strain on Defect Kinetics

In this article, a unique correlation has been established between the defect kinetics of III-nitride adatoms and strain during plasma assisted molecular beam epitaxial (PAMBE) growth of InGaN/GaN heterostructure on silicon (111) for the first time. This association identifies the possible causes for the evo

Authors:   Ankush Bag; Subhashis Das; Rahul Kumar; Dhrubes Biswas
Journal:   CrystEngComm
DOI:   10.1039/C8CE00577J
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