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Antisite-disorder engineering in La-based oxide heterostructures via oxygen vacancy control

It has been realized lately that disorder, primarily in the form of oxygen vacancies, cation stoichiometry, atomic inter-diffusion and antisite defects, has a major effect on the electronic and transport properties of a 2D electron liquid at oxide hetero-interfaces – the first and the last being the two key players

Authors:   Urmimala Dey; Swastika Chatterjee; A. Taraphder
Journal:   Physical Chemistry Chemical Physics
DOI:   10.1039/C8CP01500G
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