Sensors, Vol. 18, Pages 2111: Experiments on MEMS Integration in 0.25 μm CMOS Process

Sensors, Vol. 18, Pages 2111: Experiments on MEMS Integration in 0.25 μm CMOS Process

Sensors doi: 10.3390/s18072111

Authors: Piotr Michalik Daniel Fernández Matthias Wietstruck Mehmet Kaynak Jordi Madrenas

In this paper, we share our practical experience gained during the development of CMOS-MEMS (Complementary Metal-Oxide Semiconductor Micro Electro Mechanical Systems) devices in IHP SG25 technology. The experimental prototyping process is illustrated with examples of three CMOS-MEMS chips and starts from rough process exploration and characterization, followed by the definition of the useful MEMS design space to finally reach CMOS-MEMS devices with inertial mass up to 4.3 μg and resonance frequency down to 4.35 kHz. Furthermore, the presented design techniques help to avoid several structural and reliability issues such as layer delamination, device stiction, passivation fracture or device cracking due to stress.