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Spectroscopic second harmonic generation as a diagnostic tool in silicon materials processing

Spectroscopic second harmonic generation (SHG) has been applied to study thin layers of amorphous silicon in the second harmonic photon energy range of 2.7-3.5 eV. The layers were synthesized by hot-wire CVD of hydrogenated amorphous silicon (a-Si : H) and by Ar+ ion bombardment of crystalline silicon (c-Si). For a-Si : H a broad feature has been observed in the SHG spectrum. It is discussed that the SHG signal originates from strained Si-Si bonds in the surface or interface region of the a-Si : H film. For H-terminated Si(100) both in spectroscopic and real-time experiments the SHG signal increases by an order of magnitude upon bombardment with 70 eV Ar+ ions. We argue that the SHG signal from the amorphized Si layer is generated mainly at the buried interface with c-Si, while an additional contribution seems to originate from the amorphous Si surface region. From the combination of spectroscopic and real-time SHG studies insight into the role of strained bonds in the growth and etching processes of silicon can be gained. (© 2005 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)

Authors:   J. J. H. Gielis, A. A. E. Stevens, P. M. Gevers, H. C. W. Beijerinck, M. C. M. van de Sanden, W. M. M. Kessels
Journal:   physica status solidi (c)
Year:   2005
Pages:   3968
DOI:   10.1002/pssc.200562219
Publication date:   25-Nov-2005
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