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Non‐Volatile Photochemical Gating of an Epitaxial Graphene/Polymer Heterostructure

A novel heterostructure based on epitaxial graphene grown on silicon carbide combined with two polymers is demonstrated, with a neutral spacer and a photoactive layer that provides potent electron acceptors under UV light exposure. UV exposure of this heterostructure enables control of the electrical parameters of graphene in a non‐invasive, non‐volatile, and reversible way.

Authors:   Samuel Lara‐Avila; Kasper Moth‐Poulsen; Rositza Yakimova; Thomas Bjørnholm; Vladimir Fal’ko; Alexander Tzalenchuk; Sergey Kubatkin
Journal:   Advanced Materials
Year:   2011
Pages:   n/a
DOI:   10.1002/adma.201003993
Publication date:   07-Jan-2011
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