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Space and phase resolved ion energy and angular distributions in single- and dual-frequency capacitively coupled plasmas

01-Oct-2013 | Yiting Zhang, Mark J. Kushner, Nathaniel Moore, Patrick Pribyl, and Walter Gekelman, Journal of Vacuum Science & Technology B, 2013

The control of ion energy and angular distributions (IEADs) is critically important for anisotropic etching or deposition in microelectronic fabrication processes. With single frequency capacitively coupled plasmas (CCPs), the narrowing in angle and spread in energy of ions as they cross the ...


Stochastic exposure kinetics of extreme ultraviolet photoresists: Trapping model

01-Oct-2013 | Chris A. Mack, John J. Biafore, and Mark D. Smith, Journal of Vacuum Science & Technology B, 2013

The mechanism of extreme ultraviolet resist exposure is still in debate, with various competing mechanisms proposed. Here, three different continuum exposure models and two stochastic exposure models are compared, using predictions of acid concentration and yield as a function of dose and ...


SiO2/TiO2 distributed Bragg reflector near 1.5 μm fabricated by e-beam evaporation

01-Oct-2013 | I-Wen Feng, Sixuan Jin, Jing Li, Jingyu Lin, and Hongxing Jiang, Journal of Vacuum Science & Technology B, 2013

The authors report on the fabrication and characterization of SiO2/TiO2 distributed Bragg reflector (DBR) mirrors operating at the eye safe and optical communication wavelength window, λ = 1.5 μm. Our experimental results demonstrated that SiO2/TiO2 DBR mirrors with reflectivity exceeding 95% at ...


Detailed molecular dynamics studies of block copolymer directed self-assembly: Effect of guiding layer properties

30-Sep-2013 | Andrew J. Peters, Richard A. Lawson, Peter J. Ludovice, and Clifford L. Henderson, Journal of Vacuum Science & Technology B, 2013

Detailed molecular dynamics simulations have been performed to explore the effect of guiding layer properties and errors on resulting directed self-assembly pattern properties produced in block copolymer (BCP) thin films. Guiding patterns that are noncommensurate to the natural BCP pitch are ...


Fabrication of p-type silicon nanowires for 3D FETs using focused ion beam

30-Sep-2013 | Marcos V. Puydinger dos Santos, Lucas P. B. Lima, Jose A. Diniz, and Jose Godoy Filho, Journal of Vacuum Science & Technology B, 2013

A Ga+ focused ion beam (GaFIB) from a FIB/scanning electron microscopy (SEM) dual beam system was used for Si milling and p-type local doping of p+-type silicon nanowires (p+-SiNWs). The resulting p+-SiNWs were then used to create pMOS junctionless nanowire transistor (JNT) prototypes for ...


Characterization and photoluminescence of Co-doped SiC films

27-Sep-2013 | Xianke Sun, Xin Jin, Shiqi Wang, Huarui Liu, Peng Sun et al., Journal of Vacuum Science & Technology B, 2013

Co-doped SiC films are fabricated on Si (100) substrates by radio frequency magnetron sputtering, and the crystal structure, composition, element valences, local structure, and photoluminescence of the films are studied. Crystal structure analysis identifies the film structure as 3C-SiC and shows ...


Ion optical effects in a low pressure rf plasma

27-Sep-2013 | Hans Oechsner and Hubert Paulus, Journal of Vacuum Science & Technology B, 2013

Ion optical effects in low pressure gas discharges are introduced as a novel input into low pressure plasma technology. They are based on appropriate geometrical plasma confinements which enable a control of the shape of internal density and potential distributions and, hence, the ion motion in ...


Damaged silicon contact layer removal using atomic layer etching for deep-nanoscale semiconductor devices

27-Sep-2013 | Jong Kyu Kim, Sung Il Cho, Sung Ho Lee, Chan Kyu Kim, Kyung Suk Min et al., Journal of Vacuum Science & Technology B, 2013

Silicon atomic layer etching (ALET) using Cl2 is applied to remove the damaged layer on a 30 nm contact silicon surface formed by high-energy reactive ions during high aspect ratio contact etching, and its effects on the damage removal characteristics are investigated. Compared to a conventional ...


Characteristics of Al-doped ZnO thin films prepared in Ar + H2 atmosphere and their vacuum annealing behavior

27-Sep-2013 | Bailin L. Zhu, Kun Lu, Jun Wang, Taotao T. Li, Jun Wu et al., Journal of Vacuum Science & Technology B, 2013

The microstructure and electrical–optical properties of Al-doped ZnO (AZO) films have been studied as a function of H2 flux in the magnetron sputtering process at 150 °C and postannealing temperature in vacuum. As H2 flux increases in the sputtering gas, the AZO films deposited have a (002) ...


Review of hydrothermal ZnO nanowires: Toward FET applications

25-Sep-2013 | Conor P. Burke-Govey and Natalie O. V. Plank, Journal of Vacuum Science & Technology B, 2013

In this short review, the authors put forward the case that ZnO nanowires grown by low temperature (600  °C) vapor phase methods. The hydrothermal synthesis route displays many advantages over vapor phase synthesis routes, the foremost being the compatibility of hydrothermal synthesis with ...


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