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On the technique of absolutization of diffuse scattering intensity measurements based on thermal diffuse scattering measurements

12-Oct-2010 | V. T. Bublik, K. D. Shcherbachev, M. I. Voronova, E. V. Zhevnerov, Journal of Surface Investigation: X-ray, Synchrotron and Neutron Techniques, 2010

Features of microdefect (MD) formation in GaAs(Si) single crystals grown by horizontally oriented crystallization were studied by X-ray diffuse scattering (XRDS). Measurements were performed at room temperature (∼298 K) and near the liquid nitrogen evaporation temperature (∼85 K) using an ...


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