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Isobutylgermane



Isobutylgermane, (IBGe), (CH3)2CHCH2GeH3, is a germanium-containing liquid MOVPE (Metalorganic Vapor Phase Epitaxy) precursor - a novel alternative to the toxic germane gas that is useful in deposition of Ge films and germanium containing semiconductor films such as SiGe or strained silicon.

Additional recommended knowledge

Contents

Properties

IBGe is a non-pyrophoric source with very high vapor pressure, and is considerably less hazardous than germane gas. IBGe also offers lower decomposition temperature (ca 400 C), coupled with advantages of extremely low carbon incorporation and substantially reduced main group elemental impurities in epitaxially grown germanium comprising layers such as SiGe, SiGeC, strained silicon and GeSbTe.

Uses

Rohm and Haas and CNRS have developed a novel process to grow germanium films on germanium at low temperatures in a MOVPE reactor using isobutylgermane. The research targets Ge/III-V hetero devices.[1][2] It has been demonstrated that the growth of high quality germanium films at temperatures as low 500 C can be achieved. The low growth temperature and the new precursor are expected to eliminate a memory effect of germanium in the III-V material.

References

  1. ^ Designing Novel Organogermanium OMVPE Precursors for High-purity Germanium Films; Shenai-Khatkhate et al, Rohm and Haas Electronic Materials; Presentation at ACCGE-16, Montana, USA, July 11, 2005, and publication in Journal of Crystal Growth (2006)
  2. ^ Rohm and Haas Electronic Materials LLC, Metalorganics and Germanium Sources for MOVPE.

Further reading

  • IBGe: Brief description from National Compound Semiconductor Roadmap.
  • Élaboration et Physique des Structures Épitaxiées (LPN) Hétérostructures III-V pour l’optoélectronique sur Si: Article in French from LPN-CNRS, France.
  • Designing Novel Organogermanium OMVPE Precursors for High-purity Germanium Films; Journal of Crystal Growth, January 25, 2006.
  • Ge Precursors for Strained Si and Compound Semiconductors; Semiconductor International, April 1, 2006.
  • 摘要 随着Ge重要性的提高,需要寻找比GeH4更适用的前驱物。本文对用于应变Si和化合半导体集成电路的两种新型Ge前驱物的品质特性进行了探讨。当集成度不断增加,锗也变得日益重要。; Semiconductor International Chinese Edition, June 1, 2006.
  • 歪みSiと化合物半導体向けの Geプリカーサ; Semiconductor International Japanese Edition, August 1, 2006.
  • Rohm and Haas Electronic Materials Devises Germanium Film Growth Process; CompoundSemi News, September 23, 2005.
  • High Purity Germanium Film; III-Vs Review, September 23, 2005.
  • Development of New Germanium Precursors for SiGe Epitaxy; Deo Shenai and Egbert Woelk, Presentation at 210th ECS Meeting, Cancun, Mexico, October 29, 2006.
  • Laboratoire de Photonique et de Nanostructures, LPN CNRS
 
This article is licensed under the GNU Free Documentation License. It uses material from the Wikipedia article "Isobutylgermane". A list of authors is available in Wikipedia.
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