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Isobutylgermane, (IBGe), (CH3)2CHCH2GeH3, is a germanium-containing liquid MOVPE (Metalorganic Vapor Phase Epitaxy) precursor - a novel alternative to the toxic germane gas that is useful in deposition of Ge films and germanium containing semiconductor films such as SiGe or strained silicon.
Additional recommended knowledge
IBGe is a non-pyrophoric source with very high vapor pressure, and is considerably less hazardous than germane gas. IBGe also offers lower decomposition temperature (ca 400 C), coupled with advantages of extremely low carbon incorporation and substantially reduced main group elemental impurities in epitaxially grown germanium comprising layers such as SiGe, SiGeC, strained silicon and GeSbTe.
Rohm and Haas and CNRS have developed a novel process to grow germanium films on germanium at low temperatures in a MOVPE reactor using isobutylgermane. The research targets Ge/III-V hetero devices. It has been demonstrated that the growth of high quality germanium films at temperatures as low 500 C can be achieved. The low growth temperature and the new precursor are expected to eliminate a memory effect of germanium in the III-V material.
|This article is licensed under the GNU Free Documentation License. It uses material from the Wikipedia article "Isobutylgermane". A list of authors is available in Wikipedia.|