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Metal-induced crystallization (MIC) is a method by which amorphous silicon, or a-Si, can be turned into polycrystalline silicon at relatively low temperatures. In MIC an amorphous Si film is deposited onto a substrate, usually glass or Si, and then capped with a metal, such as aluminium. The structure is then annealed at temperatures between 150C and 400C which causes the a-Si films to be transformed into polycrystalline silicon.
|This article is licensed under the GNU Free Documentation License. It uses material from the Wikipedia article "Metal-induced_crystallization". A list of authors is available in Wikipedia.|