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Plasma etching

Plasma etching is a form of plasma processing in which a high-speed stream of plasma is shot (in pulses) at a sample. The atoms of the shot element embed themselves at or just below the surface of the target. The physical properties of the target are modified in the process. Plasma systems ionize a variety of source gases in a vacuum system by using RF excitations. The frequency of operation of the RF power source is frequently of 13.56 MHz, chosen by the Federal Communications Commission (FCC) for industrial and scientific use. Nevertheless, it can be used lower frequencies (kilohertz) or higher (microwave). The mode of operation of the plasma system change if the operating pressure change. Also, it is different for different structures of the reaction chamber. Standard plasma etching work with very high pressures. In the simple case, the electrode structure is symmetrical, and the sample is placed upon the grounded electrode. Free radicals such as fluorine or chlorine are created in the plasma and react at the sample surface.

See also: Reactive-ion etching and Deep reactive-ion etching

This article is licensed under the GNU Free Documentation License. It uses material from the Wikipedia article "Plasma_etching". A list of authors is available in Wikipedia.
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