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In physics, the tunnel magnetoresistance effect, commonly abbreviated as TMR, occurs when two ferromagnets are separated by a thin (about 1 nm) insulator. Then the resistance of the tunneling current changes with the relative orientation of the two magnetic layers. The resistance is normally higher in the anti-parallel case.
Additional recommended knowledge
Room temperature TMR was discovered in 1995 first by Terunobu Miyazaki and independently by Moodera et al. following renewed interest in this field fueled by the discovery of the giant magnetoresistive effect. It is now the base for the magnetic random access memory (MRAM) and read sensors in hard disk drives. For more technical information see [Moodera and Mathon 1999].
|This article is licensed under the GNU Free Documentation License. It uses material from the Wikipedia article "Tunnel_magnetoresistance". A list of authors is available in Wikipedia.|