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Ion beam deposition
Ion Beam Deposition is a process of applying materials to a target through the application of an ion beam.
In an ion source source materials - gases or evaporated solids - are ionized using electron ionization or by application of high electric fields (Penning ion source). In cathodic arc systems, a high voltage arc is created that literally blasts ions out of a solid source material (used particularly for carbon ion deposition). The ions are then accelerated and focused using high voltage. Optional deceleration at the substrate can be employed to select well-defined deposition energies, usually in the range of a few eV up to a few keV, gradually reaching the regime of ion implantation.
Ion beams of select elements can be prepared by mass separation using magnetic fields leading to the deposition of films of high purity. By repeated fast switching of the magnetic field to different masses, and monitoring of deposition process by current integration a well-defined stoichiometry can be realized.
|This article is licensed under the GNU Free Documentation License. It uses material from the Wikipedia article "Ion_beam_deposition". A list of authors is available in Wikipedia.|