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Aluminium gallium nitride

Aluminium gallium nitride (AlGaN) is a semiconductor material. It is an alloy of aluminium nitride and gallium nitride.

AlGaN is used to manufacture light-emitting diodes operating in blue to ultraviolet region, where wavelengths down to 250 nm (far UV) were achieved. It is also used in blue semiconductor lasers. It is also used in detectors of ultraviolet radiation, and in AlGaN/GaN HEMT transistors.

AlGaN is often used together with gallium nitride or aluminium nitride, forming heterojunctions.

AlGaN layers can be also grown on sapphire.

Safety and toxicity aspects

The toxicology of AlGaN has not been fully investigated. The AlGaN dust is an irritant to skin, eyes and lungs. The environment, health and safety aspects of aluminium gallium nitride sources (such as trimethylgallium and ammonia) and industrial hygiene monitoring studies of standard MOVPE sources have been reported recently in a review [1].


  1. ^ Environment, health and safety issues for sources used in MOVPE growth of compound semiconductors; D V Shenai-Khatkhate, R Goyette, R L DiCarlo and G Dripps, Journal of Crystal Growth, vol. 1-4, pp. 816-821 (2004); doi:doi:10.1016/j.jcrysgro.2004.09.007
This article is licensed under the GNU Free Documentation License. It uses material from the Wikipedia article "Aluminium_gallium_nitride". A list of authors is available in Wikipedia.
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