To use all functions of this page, please activate cookies in your browser.
With an accout for my.chemeurope.com you can always see everything at a glance – and you can configure your own website and individual newsletter.
- My watch list
- My saved searches
- My saved topics
- My newsletter
Ion beam induced deposition
Ion beam induced deposition or IBID is a technique for direct-write (maskless lithography) metallisation of substrates. A precursor gas containing the metal of interest is dissociated by an ion beam, typically in a FIB (focused ion beam) machine, the metal thereby being deposited onto the substrate. The beam being controlled by the computer software, any metal pattern can be written, and linewidths inferior to 10 nanometres have been written. Disadvantages of the technique include poor deposit quality, toxic precursor gases and long deposition times.
|This article is licensed under the GNU Free Documentation License. It uses material from the Wikipedia article "Ion_beam_induced_deposition". A list of authors is available in Wikipedia.|