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Nano-RAM, is a proprietary computer memory technology from the company Nantero. It is a type of nonvolatile random access memory based on the mechanical position of carbon nanotubes deposited on a chip-like substrate. In theory the small size of the nanotubes allows for very high density memories. Nantero also refers to it as NRAM in short.
Additional recommended knowledge
Nantero's technology is based on a well-known effect in carbon nanotubes where crossed nanotubes on a flat surface can either be touching or slightly separated in the vertical direction (normal to the substrate) due to Van der Waal's interactions. In Nantero's technology, each NRAM "cell" consists of a number of nanotubes suspended on insulating "lands" over a metal electrode. At rest the nanotubes lie above the electrode "in the air", about 13 nm above it in the current versions, stretched between the two lands. A small dot of gold is deposited on top of the nanotubes on one of the lands, providing an electrical connection, or terminal. A second electrode lies below the surface, about 100 nm away.
Normally, with the nanotubes suspended above the electrode, a small voltage applied between the terminal and upper electrode will result in no current flowing. This represents a "0" state. However if a larger voltage is applied between the two electrodes, the nanotubes will be pulled towards the upper electrode until they touch it. At this point a small voltage applied between the terminal and upper electrode will allow current to flow (nanotubes are conductors), representing a "1" state. The state can be changed by reversing the polarity of the charge applied to the two electrodes.
What causes this to act as a memory is that the two positions of the nanotubes are both stable. In the off position the mechanical strain on the tubes is low, so they will naturally remain in this position and continue to read "0". When the tubes are pulled into contact with the upper electrode a new force, the tiny Van der Waals force, comes into play and attracts the tubes enough to overcome the mechanical strain. Once in this position the tubes will again happily remain there and continue to read "1". These positions are fairly resistant to outside interference like radiation that can erase or flip memory in a conventional DRAM.
NRAMs are built by depositing masses of nanotubes on a pre-fabricated chip containing rows of bar-shaped electrodes with the slightly taller insulating layers between them. Tubes in the "wrong" location are then removed, and the gold terminals deposited on top. Any number of methods can be used to select a single cell for writing, for instance the second set of electrodes can be run in the opposite direction, forming a grid, or they can be selected by adding voltage to the terminals as well, meaning that only those selected cells have a total voltage high enough to cause the flip.
Currently the method of removing the unwanted nanotubes makes the system impractical. The accuracy and size of the epitaxy machinery is considerably "larger" that the cell size otherwise possible. Existing experimental cells have very low densities compared to existing systems, some new method of construction will have to be introduced in order to make the system practical.
NRAM has a density, at least in theory, similar to that of DRAM. DRAM consists of a number of capacitors, which are essentially two small metal plates with a thin insulator between them. NRAM is similar, with the terminals and electrodes being roughly the same size as the plates in a DRAM, the nanotubes between them being so much smaller they add nothing to the overall size. However it seems there is a minimum size at which a DRAM can be built, below which there is simply not enough charge being stored to be able to effectively read it. NRAM appears to be limited only by the current state of the art in lithography. This means that NRAM may be able to become much denser than DRAM, meaning that it will also be less expensive, if it becomes possible to control the locations of carbon nanotubes at the scale the semiconductor industry can control the placement of devices on silicon.
Additionally, unlike DRAM, NRAM does not require power to "refresh" it, and will retain its memory even after the power is removed. Additionally the power needed to write to the device is much lower than a DRAM, which has to build up charge on the plates. This means that NRAM will not only compete with DRAM in terms of cost, but will require much less power to run, and as a result also be much faster (write speed is largely determined by the total charge needed). NRAM can theoretically reach speeds similar to SRAM, which is faster than DRAM but much less dense, and thus much more expensive.
In comparison with other NVRAM technologies, NRAM has the potential to be even more advantageous. The most common form of NVRAM today is Flash RAM, which combines a bistable transistor circuit known as a flip-flop (also the basis of SRAM) with a high-performance insulator wrapped around one of the transistor's bases. After being written to, the insulator traps electrons in the base electrode, locking it into the "1" state. However, in order to change that bit the insulator has to be "overcharged" to erase any charge already stored in it. This requires high voltage, about 10 volts, much more than a battery can provide. Flash systems thus have to include a "charge pump" that slowly builds up power and then releases it at higher voltage. This process is not only very slow, but degrades the insulators as well. For this reason Flash has a limited lifetime, between 10,000 and 1,000,000 "writes" before the device will no longer operate effectively.
NRAM potentially avoids all of these issues. The read and write process are both "low energy" in comparison to Flash (or DRAM for that matter), meaning that NRAM can result in longer battery life in conventional devices. It may also be much faster to write than either, meaning it may be used to replace both. A modern cell phone will often include Flash memory for storing phone numbers and such, DRAM for higher speed working memory because flash is too slow, and additionally some SRAM in the CPU because DRAM is too slow for its own use. With NRAM all of these may be replaced, with some NRAM placed on the CPU to act as the CPU cache, and more in other chips replacing both the DRAM and Flash.
Comparison with other proposed systems
NRAM is one of a variety of new memory systems, many of which claim to be "universal" in the same fashion as NRAM -- replacing everything from Flash to DRAM to SRAM.
The only system currently ready for commercial use is ferroelectric RAM (FRAM or FeRAM). FeRAM adds a small amount of a ferro-electric material in an otherwise "normal" DRAM cell, the state of the field in the material encoding the bit in a non-destructive format. FeRAM has all of the advantages of NRAM, although the smallest possible cell size is much larger than for NRAM. FeRAM is currently in use in a number of applications where the limited number of writes in Flash is an issue, but due to the massive investment in Flash factories (fabs), it has not yet been able to even replace Flash in the market.
Other more speculative memory systems include MRAM and PRAM. MRAM is based on a magnetic effect similar to that utilized in modern hard drives, the memory as a whole consisting of a grid of small magnetic "dots" each holding one bit. Key to MRAM's potential is the way it reads the memory using the magneto-restrictive effect, allowing it to read the memory both non-destructively and with very little power. Unfortunately it appears MRAM is already reaching its fundamental smallest cell size, already much larger than existing Flash devices. PRAM is based on a technology similar to that in a writable CD or DVD, using a phase-change material that changes its magnetic or electrical properties instead of its optical ones. PRAM appears to have a small cell size as well, although current devices are nowhere near small enough to find if there is some practical limit.
|This article is licensed under the GNU Free Documentation License. It uses material from the Wikipedia article "Nano-RAM". A list of authors is available in Wikipedia.|