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Optical beam induced current
Optical beam induced current (OBIC) is a semiconductor analysis technique performed using laser signal injection. The technique induces the creation of electron–hole pairs in the semiconductor sample through the use of the microscope's laser source. This technique is used in semiconductor failure analysis in order to locate buried diffusion regions, damaged junctions and gate oxide shorts.
Additional recommended knowledge
Use of OBIC for FIB milling end-point detection
The OBIC technique may be used to detect the point at which a FIB milling operation in progress must be terminated. This is accomplished by using a laser to induce a photocurrent in the silicon while simultaneously monitoring the device power supply for changes. The changes detected are proportional to the thickness of the silicon being milled by the FIB. 
|This article is licensed under the GNU Free Documentation License. It uses material from the Wikipedia article "Optical_beam_induced_current". A list of authors is available in Wikipedia.|