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Indium(III) selenide is a compound of indium and selenium. It has potential for use in photovoltaic devices and it has been the subject of extensive research. The two most common forms α- and β- have defect wurtzite structures, however there are five known forms (α, β, γ, δ, κ) The α- β phase transition is accompanied by a change from metallic conduction.  The band-gap of γ-In2Se3 is approximately 1.9 eV. The crystalline form of a sample can depend on the method of production, for example thin films of pure γ-In2Se3 have been produced from trimethylindium, InMe3, and hydrogen selenide, H2Se, using MOCVD techniques 
Additional recommended knowledge
Greenwood, N. N.; Earnshaw, A. (1997). Chemistry of the Elements, 2nd Edition, Oxford:Butterworth-Heinemann. ISBN 0-7506-3365-4.
|This article is licensed under the GNU Free Documentation License. It uses material from the Wikipedia article "Indium(III)_selenide". A list of authors is available in Wikipedia.|