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• Sugar and slice make graphene real nice

  Future computers may run a little sweeter, thanks to a refinement in the manufacture of graphene at Rice University. Rice researchers have learned to make pristine sheets of graphene, the one-atom-thick form of carbon, from plain table sugar and other carbon-based substances. They do so in a one-st more

• On the way to lead-free technology

  The change-over to lead-free products is in full progress. The problem is however that the environmentally friendly alternatives have to be as effi cient as the lead-containing variants. One example is the injection system of diesel engines. Lead-free functional materials can be found faster by mean more

• Nanoribbons for graphene transistors

  In the recent issue of Nature, scientists from Empa and the Max Planck Institute for Polymer Research report how they have managed for the first time to grow graphene ribbons that are just a few nanometres wide using a simple surface-based chemical method. Graphene ribbons are considered to be «hot more

Publications Doping

• Environmentally friendly reduction of platinum catalyst precursor supported on polypyrrole

  Supported metals are traditionally prepared by impregnating a support material with the metal precursor solution, followed by reduction in hydrogen at elevated temperatures. In this study, a polymeric support has been considered. Polypyrrole (PPy) has been chemically synthesized using FeCl3 as dopin more

• On the Differing Sensitivity to Chemical Gating of Single and Double Layer Epitaxial Graphene Explored Using Scanning Kelvin Probe Microscopy

  Using environmental scanning Kelvin probe microscopy, we show that the position of the Fermi level of single layer graphene is more sensitive to chemical gating than that of double layer graphene. We calculate that the difference in sensitivity to chemical gating is not entirely due to the differenc more

• Selective area growth of InAs on InP with dielectric mask

  Low resistance ohmic contacts are important for high frequency applications of InP-based heterojunction bipolar transistors and high electron mobility transistors. In this paper, the authors investigate the use of an InAs layer as the low-resistance ohmic contact to these heterostructure devices. Se more

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