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Next-generation lithography



Next-Generation Lithography (NGL) is a term used in integrated circuit manufacturing to describe the lithography technologies slated to replace photolithography beyond the 32 nm node.

The candidates for next-generation lithography include: high-index immersion lithography, extreme ultraviolet lithography (EUV-lithography), X-ray lithography, electron beam lithography, focused ion beam lithography and nanoimprint lithography.

These techniques, together with photolithography, share one fundamental characteristic: etching of polymer (resist) as the last step. Ultimately the quality (roughness) as well as resolution of this polymer etching limits the inherent resolution of the lithography technique.

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This article is licensed under the GNU Free Documentation License. It uses material from the Wikipedia article "Next-generation_lithography". A list of authors is available in Wikipedia.
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