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Next-generation lithography

Next-Generation Lithography (NGL) is a term used in integrated circuit manufacturing to describe the lithography technologies slated to replace photolithography beyond the 32 nm node.

The candidates for next-generation lithography include: high-index immersion lithography, extreme ultraviolet lithography (EUV-lithography), X-ray lithography, electron beam lithography, focused ion beam lithography and nanoimprint lithography.

These techniques, together with photolithography, share one fundamental characteristic: etching of polymer (resist) as the last step. Ultimately the quality (roughness) as well as resolution of this polymer etching limits the inherent resolution of the lithography technique.

See also

This article is licensed under the GNU Free Documentation License. It uses material from the Wikipedia article "Next-generation_lithography". A list of authors is available in Wikipedia.
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