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Indium(III) phosphide



Electronic Properties
IUPAC name Indium phosphide
Other names Indium(III) phosphide
Identifiers
CAS number 22398-80-7
Properties
Molecular formula InP
Molar mass 145.792 g/mol
Appearance Black cubic crystals.
Density 4.81 g/cm3, solid.
Melting point

1062°C (1335.15 K)

Boiling point

No information.

Solubility in water  ? g/100 ml (?°C)
Structure
Crystal structure FCC
Hazards
Main hazards In Compounds: Highly toxic via subcutaneous and moderately toxic via oral routes. Symptoms of acute indium intoxication

are anorexia, localized convulsive motions, hind-leg paralysis, pulmonary edema, necrotizing pneumonia, and renal and hepatic damage with resultant dysfunction. Chronic indium intoxication leads to weight loss, poor growth, and extensive necrotic damage to the liver and kidneys.

Related Compounds
Other anions InN, InAs, InSb.
Other cations Gallium phosphide,
Aluminium phosphide
Related compounds Gallium arsenide phosphide
Except where noted otherwise, data are given for
materials in their standard state
(at 25 °C, 100 kPa)

Infobox disclaimer and references

Indium phosphide (InP) is a binary semiconductor composed of indium and phosphorus. It is used in high-power and high-frequency electronics because of its superior electron velocity with respect to the more common semiconductors silicon and gallium arsenide. It also has a direct bandgap, making it useful for optoelectronics devices like laser diodes.

Additional recommended knowledge

InP is also used as a substrate for epitaxial indium gallium arsenide based opto-electronic devices.

Indium phosphide also has one of the longest-lived optical phonons of any compound with the zincblende crystal structure.

Optical properties

The Sellmeier equation that describes how the optical refractive index for indium phosphide depends on wavelength is given by n^2(\lambda) = 7.255 + \frac{2.316 \lambda^2 }{ \lambda^2 - 0.6263^2} + \frac{2.765 \lambda^2 }{ \lambda^2 - 32.935^2}, where λ is the wavelength in micrometres.

This gives refractive index values rising from around 3.21 at 10 µm and 3.32 at 1.5 µm to 3.47 at 1.0 µm.


References

    Suppliers

    • MSDS at Wafertech
    • MSDS ar espimetals (pdf)
    • Arnaud electronics single crystal wafers
    • Wafer technology polycrystalline
    • Vitesse DARPA funded 150GHz circuits
     
    This article is licensed under the GNU Free Documentation License. It uses material from the Wikipedia article "Indium(III)_phosphide". A list of authors is available in Wikipedia.
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