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Metalorganic vapour phase epitaxy
Metalorganic vapour phase epitaxy (MOVPE) is a chemical vapour deposition method of epitaxial growth of materials, especially compound semiconductors from the surface reaction of organic compounds or metalorganics and metal hydrides containing the required chemical elements. For example, indium phosphide could be grown in a reactor on a substrate by introducing Trimethylindium ((CH3)3In) and phosphine (PH3). Alternative names for this process include organometallic vapour phase epitaxy (OMVPE), metalorganic chemical vapour deposition (MOCVD) and organometallic chemical vapour deposition (OMCVD). Formation of the epitaxial layer occurs by final pyrolisis of the constituent chemicals at the substrate surface. In contrast to molecular beam epitaxy (MBE) the growth of crystals is by chemical reaction and not physical deposition. This takes place not in a vacuum, but from the gas phase at moderate pressures (2 to 100 kPa). As such this technique is preferred for the formation of devices incorporating thermodynamically metastable alloys. It has become the dominant process for the manufacture of laser diodes, solar cells, and LEDs.
Additional recommended knowledge
A non-exhaustive list of metalorganic chemicals used to grow semiconductors by MOVPE.
Semiconductors grown by MOVPE
Environment, Health and Safety
Gerald B. Stringfellow (1999). Organometallic Vapor-Phase Epitaxy: Theory and Practice (2nd ed.). Academic Press (ISBN 0-12-673842-4).
|This article is licensed under the GNU Free Documentation License. It uses material from the Wikipedia article "Metalorganic_vapour_phase_epitaxy". A list of authors is available in Wikipedia.|