Philips: Automatically characterize new dielectric materials in semiconductor process lines

28-Mar-2001
Accurately characterizing the latest dielectric materials, Philips Analytical's fully automatic PQ Ruby measures thicknesses, refractive indices and absorption coefficients of transparent films from 0 nm to 30 microns thick. Materials include (ultra-thin) gate oxides, low- and high-k dielectrics, nitrides, CMP oxides, 193-nm ARC and resist, SOI, amorphous Si and poly-Si. Precision and repeatability are typically 0.03Å for ultra-thin gate oxides, even at the high throughput needed for in-line process control of semiconductor production-lines/order_t/'>production lines. Laser ellipsometry is by far the more precise and repeatable method over spectroscopic ellipsometry for measuring film thicknesses. The PQ Ruby therefore helps IC manufacturers to measure and understand the changes in materials that occur during production, thus improving both yields and the processes themselves. A unique double infra-red option solves the ambiguity problem of single laser systems, generating unique values even when characterizing multi-layer (for example OPO and ONO) stacks in a single measurement. All this with a microspot size of around 10 microns allows in-structure analysis. The recently introduced Reflectometer is completely integrated into the system, further expanding the thickness range and yet operated from within the same, user-friendly Windows-NT based software. The PQ Ruby fits into new or existing 200 mm fabs, with an optional dual load port expanding the exceptional throughput and doubling unattended operation time. The footprint is extremely small (0.75 and 1.44 sq. meters for the single and dual load port systems respectively) to save valuable clean-room space. The combined Laser Ellipsometer/Reflectometer suits fully automatic in-line process control systems, and can optionally be managed by SECS/GEM software. Both hardware and software are SEMI compliant, with pattern recognition software to increase throughput.

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