Air Products Signs Sole License Agreement with Fujifilm Electronic Materials USA for PDEMS(TM) ILD Process
The PDEMS(TM) ILD Process, developed by Air Products, is a breakthrough process for making a porous low-k dielectric material by PECVD. As claimed in US Patent numbers 6,583,048 and 6,846,515, the organosilicate structure of the film is created using a diethoxymethylsilane precursor, referred to as a "structure former." Pores are imparted to the film by employing a hydrocarbon-based precursor known as a "porogen" that co-deposits during the growth of the film. Pores are created by removing the porogen using various post-treatment processes.
Under the license agreement, Air Products will continue to sell DEMS(TM) (diethoxymethylsilane) and porogens for use in the PDEMS(TM) ILD Process. Fujifilm Electronic Materials U.S.A. will sell its own M-DEOS(TM) (diethoxymethylsilane) and porogens for use in the PDEMS(TM) ILD Process. Both companies will interface directly with customers in selling the precursors used in the patented process.
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