Silicon Carbide

In power electronics, semiconductors are based on the element silicon – but the energy efficiency of silicon carbide would be much higher. Physicists of the University of Basel, the Paul Scherrer Institute and ABB explain what exactly is preventing the use of this combination of silicon and carbon i more

Scientists at Chalmers University of Technology, Sweden, have made a breakthrough in the way one can control the charge carrier density in graphene. They have discovered a novel method to dope graphene over large areas that enables the study of the physics at the Dirac point, where graphene is charg more

Scientists at HZB have found evidence that double layers of graphene have a property that may let them conduct current completely without resistance. They probed the bandstructure at BESSY II with extremely high resolution ARPES and could identify a flat area at a surprising location. Carbon atoms h more

Materials, Vol. 11, Pages 1120: A Novel Method of Synthesizing Graphene for Electronic Device Applications Materials doi: 10.3390/ma11071120 Authors: Nierlly Galvão Getúlio Vasconcelos Rodrigo Pessoa João Machado Marciel Guerino Mariana Fraga Bruno Rodrigues Julien Camus Abd more

Energies, Vol. 11, Pages 1646: LCL Filter Design with EMI Noise Consideration for Grid-Connected Inverter Energies doi: 10.3390/en11071646 Authors: Yitao Liu Ching-Ming Lai The grid-injected current total harmonics distortion (THD) and electromagnetic interference (EMI) noise must b more

Here, we report the electrochemical deposition of lead (Pb) as a model metal on epitaxial graphene fabricated on silicon carbide (Gr/SiC). The kinetics of electrodeposition and morphological characteristics of the deposits were evaluated by complementary electrochemical, physical and computational m more