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4 Current news of Fraunhofer-Institut IISB

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Unique X-ray Topography Based Defect Characterization for SiC Wafers Honored with Georg Waeber Innovation Award 2023

02-Nov-2023 - A cross-organizational team from Rigaku SE and Fraunhofer IISB has established a new semiconductor material characterization method in their jointly operated Center of Expertise for X-ray Topography in Erlangen, Germany. They succeeded not only in developing an industry-ready X-ray topography ...

quality control semiconductor analysis semiconductors +2

Improved quality control of silicon carbide epiwafers by a new fast and contactless inline inspection tool

01-Jul-2014 - A new fast and contactless Defect Luminescence Scanner (DLS) for photoluminescence imaging of 4H-SiC epiwafers was developed under coordination of Fraunhofer IISB together with Intego GmbH. This DLS system enables a more efficient optimization of the production process of SiC epiwafers as well as ...

quality control Silicon carbide structural defects

Materials with potential: growing through holes

25-May-2010 - Silicon carbide (4H-SiC) is the ideal semiconductor material for power electronics. For instance, efficient power converters for electric vehicles or photovoltaic systems can be produced - as well as electronics that work at high temperatures. Until now, however, very few electron devices made of ...

process development silicon Silicon carbide +2

Accredited Analysis Laboratory for Micro and Nanotechnology at Fraunhofer IISB

05-Feb-2010 - The Analysis Laboratory for Micro- and Nanotechnology at the Fraunhofer In-stitute for Integrated Systems and Device Technology IISB in Erlangen was accredited by the ‘Deutsche Gesellschaft für Akkreditierung’ following DIN EN ISO/IEC 17025:2005. The testing laboratory in Erlangen carries out ...

accreditation chemicals clean-rooms +7